
HiPerFET TM
Power MOSFETs
Q-Class
IXFH 58N20Q
IXFT 58N20Q
V DSS
I D25
R DS(on)
= 200 V
= 58 A
= 40 m W
N-Channel Enhancement Mode
Avalanche Rated High dv/dt, Low Q g
Preliminary data sheet
t rr £ 200 ns
Symbol
Test Conditions
Maximum Ratings
TO-268 (D3) (IXFT) Case Style
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
200
200
V
V
V GS
V GSM
I D25
I DM
I AR
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
± 20
± 30
58
232
58
V
V
A
A
A
TO-247 AD
G
S
(TAB)
E AR
T C = 25 ° C
30
mJ
E AS
dv/dt
P D
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 2 ?
T C = 25 ° C
1.0
5
300
J
V/ns
W
(TAB)
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
G = Gate
S = Source
D = Drain
TAB = Drain
T L
1.6 mm (0.062 in.) from case for 10 s
300
° C
Features
M d Mounting torque
Weight TO-247
TO-268
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
V DSS V GS = 0 V, I D = 250 μ A
V GS(th) V DS = V GS , I D = 4 mA
1.13/10 Nm/lb.in.
6 g
4 g
Characteristic Values
Min. Typ. Max.
200 V
2.0 4.0 V
l
l
l
l
l
l
IXYS advanced low Q g process
International standard packages
Low gate charge and capacitance
- easier to drive
- faster switching
Low R DS (on)
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL 94 V-0
flammability classification
I GSS
V GS = ± 20 V DC , V DS = 0
± 100
nA
Easy to mount
Space savings
High power density
I DSS
R DS(on)
V DS = V DSS T J = 25 ° C
V GS = 0 V T J = 125 ° C
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
25
1
40
μ A
mA
m ?
Advantages
l
l
l
? 1999 IXYS All rights reserved
98523A (5/99)